SEMIKRON 模塊/第四代采用SPT芯片的IGBT在高頻特性和功耗匹配更合理,采用鋼線連接,這種連接方法集膚效應(yīng)更好,并且采用對(duì)稱結(jié)構(gòu)使分布電感量最小.128系列采用80度標(biāo)示,在同等條件下,SEMIKRON第四代SPT芯片的IGBT比同等產(chǎn)品性能更好,結(jié)溫低20-30度. 模塊SKM200GAR173D SKM150GB128D SKM145GB128D SKM75GB128D SKM75GB173D SKM75GB123D SKM75GB123D SKM 75GB176D SKM100GB123 SKM 300GAL128D SKM 400GAL128D SKM 145GAR128D SKM 400GAR128D SKM 75GAR123D SKM 200GB125D SKM 100GAR123D SKM 100GAR123D SKM 300GAR123D SKM 500GA123DS SKM 100GB123D SKM 145GB123D SKM 150GB123D SKM 300GA123D SKM 400GA123D SKM 500GA123D SKM 400GAL125D SKM 200GAR125D SKM 400GAR125D 天津 022-27340196 13602086845